Document Details
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Document Type |
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Article In Journal |
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Document Title |
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Growth, Characterization and Electrical Anisotropy in Layered Chalcogenide Gallium Monosulphide Single Crystals الإنماء البلوري والخصائص الكهربائية اللاتجاهية لبلورات أحادية شالكوجنيدية طبقية من مركب كبريتيد الجاليوم |
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Subject |
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Growth, Characterization and Electrical Anisotropy in Layered Chalcogenide Gallium Monosulphide Single Crystals |
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Document Language |
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English |
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Abstract |
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Single crystals of GaS were prepared by a modified of Bridgman technique. Measurements of electrical conductivity and Hall-coefficient are performed in a single crystal GaS parallel and perpendicular to c-axis. At room temperature the conductivity ratio (?? /?\\ ) is equal to ten. The study covers a wide range of temperature. It was found that the samples have p-type conductivity. In the intrinsic conduction region an energy gap of 2.5eV occured The ionization energy is determined. Very strong anisotropy in the hole mobility parallel and perpendicular to c-axis was observed. The scattering mechanism at low and high temperatures is checked. |
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ISSN |
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1012-1319 |
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Journal Name |
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Science Journal |
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Volume |
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22 |
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Issue Number |
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2 |
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Publishing Year |
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1431 AH
2010 AD |
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Article Type |
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Article |
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Added Date |
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Tuesday, October 1, 2013 |
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Researchers
| رقية حسين العريني | Aloraini, Rogaia Hussain | Researcher | | |
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